WAFER PRODUCTION METHOD

Organization Name

DENSO CORPORATION

Inventor(s)

Koichiro Yasuda of Kariya-city (JP)

Ryota Takagi of Kariya-city (JP)

Tomoki Kawazu of Kariya-city (JP)

Sodai Nomura of Kariya-city (JP)

Hideaki Shirai of Kariya-city (JP)

Bahman Soltani of Kariya-city (JP)

Shunsuke Sobajima of Kariya-city (JP)

WAFER PRODUCTION METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 18735416 titled 'WAFER PRODUCTION METHOD

Simplified Explanation: This patent application describes a method for producing wafers from ingots with a c-axis inclined in an off-angle direction.

Emit a laser beam to create a separation layer in the ingot.
Apply a physical load to remove a wafer precursor from the ingot.
Planarize the removed object to form a wafer.

Key Features and Innovation:

Laser beam used to create a separation layer in the ingot.
Physical load applied to remove wafer precursor.
Planarization process to form the wafer.

Potential Applications: This technology can be used in semiconductor manufacturing, solar cell production, and other industries requiring high-quality wafers.

Problems Solved: This method streamlines the wafer production process, improving efficiency and yield.

Benefits:

Higher quality wafers produced.
Increased efficiency in wafer production.
Cost savings in manufacturing processes.

Commercial Applications: The technology can be applied in semiconductor fabrication plants, solar panel manufacturing facilities, and other industries requiring precision wafers.

Prior Art: Readers can explore prior art related to laser processing of materials and wafer production methods.

Frequently Updated Research: Stay informed about advancements in laser technology and semiconductor manufacturing processes.

Questions about Wafer Production: 1. How does the laser beam create a separation layer in the ingot? 2. What are the potential applications of this wafer production method?

Original Abstract Submitted

A wafer production method for producing a wafer from an ingot oriented to have a c-axis inclined in an off-angle direction at an off-angle more than zero degree From a central axis includes steps of emitting a laser beam to a top surface that is one of end surfaces of the ingot opposed to each other in height direction thereof to form a separation layer at a depth from the top surface of the ingot which corresponds to a thickness of the wafer, applying a physical load in a single direction to a first end that is one of ends of the ingot which are opposed to each other in an off-angle direction to remove a wafer precursor from the ingot at the separation layer, and planarizing a major surface of a removed object derived by separating the wafer precursor from the ingot at the separation layer, thereby forming a wafer. The ingot has a given degree of transmittance to the laser beam. The wafer precursor is created by a portion of the ingot between the top surface of the ingot and the separation layer.