18727465. MAGNETO RESISTIVE MEMORY DEVICE (CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE)
MAGNETO RESISTIVE MEMORY DEVICE
Organization Name
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
Inventor(s)
Victorien Brecte of Aix-en-Provence (FR)
Julien Louche of Saint-Martin-le-Vinoux (FR)
MAGNETO RESISTIVE MEMORY DEVICE
This abstract first appeared for US patent application 18727465 titled 'MAGNETO RESISTIVE MEMORY DEVICE
Original Abstract Submitted
A magneto resistive memory device including a memory array with at least one bit line (BL) and at least one source line (SL, SLB), the bit line (BL) and the at least one source line (SL, SLB) associated with a plurality of memory cells each presenting a magnetic tunnel junction and each presenting at least one selection transistor (RT) to selectively connect the bit line (BL). The memory array also includes a peripheral block configured to apply a first voltage (Vread) greater than ground voltage (Vss) on the bit line (BL) and applying a second voltage (VSL) greater than the first voltage (Vread) on the at least one source line (SL, SLB). The state stored in the selected cell is detected by using a sense amplifier (SA) of the peripheral block associated with the at least one bit line (BL) to sense the current flowing in the bit line (BL).
