18723091. SEMICONDUCTOR APPARATUS (Mitsubishi Electric Corporation)
SEMICONDUCTOR APPARATUS
Organization Name
Mitsubishi Electric Corporation
Inventor(s)
SEMICONDUCTOR APPARATUS
This abstract first appeared for US patent application 18723091 titled 'SEMICONDUCTOR APPARATUS
Original Abstract Submitted
A semiconductor apparatus includes a ridge portion formed on a semiconductor substrate and having a lower-side clad layer, an MQW portion formed and an upper-side clad layer; a blocking layer on both sides of the ridge portion; and a contact layer formed on the upper-side clad layer, wherein in a semiconductor layer that is formed with the semiconductor substrate, the blocking layer, and the contact layer, at least layers of the first conductivity type, the second conductivity type, the first conductivity type, and the second conductivity type are laminated from a lower side, first two grooves are formed in a composite layer that is formed with layers from the blocking layer to the contact layer, and the contact layer on the ridge portion and the contact layer interposed between the first two grooves are connected together by a first electrode.