SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

Organization Name

Inventor(s)

Tsunemoto Ogata of Koshi-shi, Kumamoto (JP)

Hiroshi Marumoto of Koshi-shi, Kumamoto (JP)

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18701058 titled 'SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

The patent application describes a substrate processing method that involves two etching processes to achieve different etching rates on a substrate surface.

The first etching process creates a liquid paddle on the substrate surface by locally discharging a process liquid towards a target area, resulting in varying etching rates across the surface.
The second etching process covers the entire substrate surface with an etching liquid film while rotating the substrate to etch the entire surface simultaneously.

Key Features and Innovation:

Two-step etching process with varying etching rates on the substrate surface.
Use of an etching inhibitor liquid to control the etching rate in specific areas.
Simultaneous etching of the entire substrate surface for efficiency.

Potential Applications:

Semiconductor manufacturing
Microelectronics fabrication
MEMS (Micro-Electro-Mechanical Systems) production

Problems Solved:

Achieving different etching rates on a substrate surface
Ensuring uniform etching across the entire surface

Benefits:

Enhanced control over etching processes
Improved efficiency in substrate processing
Potential for more precise manufacturing of electronic components

Commercial Applications:

This technology could be utilized in semiconductor fabrication facilities to enhance the production of microelectronics and MEMS devices.

Prior Art:

Researchers and engineers in the field of semiconductor processing may have explored similar methods for controlling etching rates on substrates.

Frequently Updated Research:

Ongoing research in the field of microelectronics fabrication may lead to advancements in substrate processing methods.

Questions about Substrate Processing Method: 1. How does the use of an etching inhibitor liquid impact the etching process? 2. What are the potential challenges in implementing this two-step etching method in industrial settings?

Original Abstract Submitted

A substrate processing method including a first etching process of performing etching, where a first process liquid paddle is formed on an entire surface of a substrate, by locally discharging a second process liquid from a nozzle toward a target area locally set on the substrate surface, such that an etching rate in the target area differs from that in other areas; and a second etching process of etching the entire surface of the substrate simultaneously by supplying an etching liquid so that the entire surface of the substrate is covered with a liquid film of the etching liquid while rotating the substrate, wherein one of the first and second process liquids used in the first etching process is the etching liquid, and the other is an etching inhibitor liquid that lowers an etching rate of the substrate surface by the etching liquid when mixed with the etching liquid.