SEMICONDUCTOR LASER ELEMENT

Organization Name

Mitsubishi Electric Corporation

Inventor(s)

Kenichi Abe of Chiyoda-ku, Tokyo JP

Koichi Akiyama of Chiyoda-ku, Tokyo JP

Satoshi Nishikawa of Chiyoda-ku, Tokyo JP

SEMICONDUCTOR LASER ELEMENT

This abstract first appeared for US patent application 18689471 titled 'SEMICONDUCTOR LASER ELEMENT

Original Abstract Submitted

A semiconductor laser element includes: a semiconductor laser portion; a transition portion that is adjacent to the semiconductor laser portion in a first direction and a spot size converter that is adjacent to the transition portion in the first direction. Each of the semiconductor laser portion, the transition portion and the spot size converter includes: a semiconductor substrate having a first surface; and a first clad layer, an active layer and a second clad layer stacked on the first surface in this order from the first surface side in a third direction orthogonal to the first surface. Each of the transition portion and the spot size converter further includes a waveguide layer that is in contact with a part of an upper surface of the second clad layer and has a refractive index higher than refractive indexes of the active layer and the second clad layer.