18688739. ATOMIC LAYER ETCHING USING BORON TRICHLORIDE (LAM RESEARCH CORPORATION)
ATOMIC LAYER ETCHING USING BORON TRICHLORIDE
Organization Name
Inventor(s)
Andreas Fischer of Castro Valley CA US
Aaron Lynn Routzahn of Fremont CA US
Thorsten Bernd Lill of Kalaheo HI US
ATOMIC LAYER ETCHING USING BORON TRICHLORIDE
This abstract first appeared for US patent application 18688739 titled 'ATOMIC LAYER ETCHING USING BORON TRICHLORIDE
Original Abstract Submitted
Methods and apparatuses for etching materials using a boron trichloride during atomic layer etching are provided. The method comprises providing a wafer to a processing chamber, the wafer having an oxygen-containing material, exposing the oxygen-containing material to a halogen-containing gas to form a modified oxygen-containing layer on a surface of the wafer, and exposing the modified oxygen-containing layer to the boron trichloride to remove the modified layer from the surface of the wafer.