18685668. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS (Tokyo Electron Limited)
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
Organization Name
Inventor(s)
Koji Kagawa of Koshi-shi, Kumamoto JP
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
This abstract first appeared for US patent application 18685668 titled 'SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
Original Abstract Submitted
A technique enabling wet etching of a first silicon oxide film with high selectivity with respect to a metal film and a second silicon oxide film is provided. A substrate processing method of wet-etching a substrate having a stacked structure including a metal film, a first silicon oxide film, and a second silicon oxide film having a moisture content lower than that of the first silicon oxide film is provided. The substrate processing method includes performing an etching while increasing etching selectivity of the first silicon oxide film with respect to the second silicon oxide film and the metal film by supplying an etching liquid, which is prepared by diluting sulfuric acid, hydrogen peroxide and hydrofluoric acid in an anhydrous organic solvent, to the substrate such that the metal film, the first silicon oxide film, and the second silicon oxide film are simultaneously exposed to the etching liquid.