IMAGING APPARATUS AND ELECTRONIC DEVICE

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IMAGING APPARATUS AND ELECTRONIC DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18681572 titled 'IMAGING APPARATUS AND ELECTRONIC DEVICE

The patent application describes an imaging apparatus with pixels arranged in a two-dimensional lattice pattern, each containing a photoelectric conversion unit, gate electrode, and diffusion region in a semiconductor substrate.

Photoelectric conversion units in pixels convert incident light.
Gate electrodes transfer accumulated charge.
Diffusion regions receive transferred charge.
Components are arranged along the substrate thickness direction.
Decrease in charge transfer efficiency is suppressed.

Potential Applications: - Digital cameras - Surveillance systems - Medical imaging devices

Problems Solved: - Improved charge transfer efficiency - Enhanced image quality - Reduced noise in imaging

Benefits: - Higher quality images - Increased sensitivity to light - Enhanced performance in low-light conditions

Commercial Applications: Title: "Advanced Imaging Technology for Enhanced Image Quality" This technology can be used in digital cameras, surveillance systems, and medical imaging devices to improve image quality and performance, catering to a wide range of commercial applications.

Questions about the technology: 1. How does this technology improve image quality in comparison to existing imaging systems? 2. What are the potential cost implications of implementing this technology in commercial products?

Frequently Updated Research: Researchers are continually exploring ways to enhance charge transfer efficiency and image quality in imaging devices, with a focus on improving performance in various lighting conditions.

Original Abstract Submitted

A decrease in charge transfer efficiency is suppressed. An imaging apparatus according to an embodiment includes a plurality of pixels arrayed in a two-dimensional lattice pattern, in which each of the pixels includes a photoelectric conversion unit (PD) that photoelectrically converts incident light, a gate electrode that transfers charge accumulated in the photoelectric conversion unit, and a diffusion region (FD) to which the charge transferred from the photoelectric conversion unit flows, and the photoelectric conversion unit, the gate electrode, and the diffusion region are arrayed in a semiconductor substrate along a substrate thickness direction of the semiconductor substrate.