18676858. INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE (SAMSUNG ELECTRONICS CO., LTD.)
INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Heonjong Shin of Suwon-si (KR)
Juneyoung Park of Suwon-si (KR)
INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18676858 titled 'INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE
Original Abstract Submitted
An integrated circuit semiconductor device includes a base layer including a first surface and a second surface, a gate structure on the first surface of the base layer, a first source and drain region on a side of the gate structure, a second source and drain region on another side of the gate structure, a first placeholder in the base layer in a lower portion of the first source and drain region and electrically connected to the first source and drain region, a second placeholder in the base layer in a lower portion of the second source and drain region, and a metal power rail on the first placeholder and the second placeholder on the second surface of the base layer and electrically connected to the first placeholder.