18672635. ADAPTIVE WEAR LEVELING FOR ENDURANCE COMPENSATION simplified abstract (Micron Technology, Inc.)
ADAPTIVE WEAR LEVELING FOR ENDURANCE COMPENSATION
Organization Name
Inventor(s)
Charles See Yeung Kwong of Redwood City CA (US)
Seungjune Jeon of Santa Clara CA (US)
Zhenming Zhou of San Jose CA (US)
ADAPTIVE WEAR LEVELING FOR ENDURANCE COMPENSATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18672635 titled 'ADAPTIVE WEAR LEVELING FOR ENDURANCE COMPENSATION
The abstract of the patent application describes a method for identifying a first block of a memory device, determining the die on which the block resides, selecting a threshold value based on projected reliability metrics, and performing a program operation on a second block when an endurance metric matches the threshold value.
- Identification of first blocks in a set of memory device blocks
- Determination of the die where the first block is located
- Selection of a threshold value based on projected reliability metrics
- Execution of a program operation on a second block when endurance metric matches threshold value
Potential Applications: - Memory devices - Data storage systems - Semiconductor manufacturing
Problems Solved: - Efficient management of memory blocks - Enhanced reliability of memory devices
Benefits: - Improved performance of memory devices - Extended lifespan of memory blocks - Enhanced data storage capabilities
Commercial Applications: Title: "Advanced Memory Management Technology for Enhanced Data Storage" This technology can be utilized in various industries such as data centers, consumer electronics, and automotive systems to optimize memory usage and improve overall system performance.
Questions about the technology: 1. How does this method improve the reliability of memory devices? 2. What are the key factors considered when selecting the threshold value for the die?
Frequently Updated Research: Stay updated on advancements in memory management technologies and semiconductor manufacturing processes to enhance the efficiency and reliability of memory devices.
Original Abstract Submitted
A first blocks of a set of blocks of a memory device is identified. A die on which the first block resides is identified among a plurality of dies of the memory device. A threshold value associated with the die is selected from a range associated with a projected reliability metric of the die. Responsive to determining that an endurance metric value associated with the die matches the threshold value, a program operation is performed with respect to a second block of the set of blocks.