18671164. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor(s)
Ding-I Liu of Hsinchu City (TW)
Yuh-Ta Fan of Hsinchu City (TW)
Kai-Shiung Hsu of Hsinchu City (TW)
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18671164 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES
Simplified Explanation
The patent application describes a method of manufacturing a semiconductor device involving the formation of various layers and the use of specific materials to enhance the device's performance.
- Forming a gate dielectric layer over a channel region
- Forming a first conductive layer over the gate dielectric layer
- Implanting a dopant (boron, silicon, carbon, or nitrogen) into the surface region of the first conductive layer to create a protective layer
- Applying a metal-containing gas to form a metallic layer
- Removing the metallic layer using a wet etching operation with a solution
Key Features and Innovation
- Use of specific dopants (boron, silicon, carbon, or nitrogen) to create a protective layer
- Application of a metal-containing gas to form a metallic layer
- Wet etching operation to remove the metallic layer
Potential Applications
This technology can be applied in the manufacturing of various semiconductor devices, such as integrated circuits, transistors, and memory chips.
Problems Solved
This method addresses the need for improved performance and reliability of semiconductor devices by enhancing the protective layers and conductive materials used in their manufacturing process.
Benefits
- Enhanced performance and reliability of semiconductor devices
- Improved manufacturing process efficiency
- Increased device longevity and durability
Commercial Applications
- Semiconductor industry for manufacturing advanced electronic devices
- Technology companies for developing cutting-edge products
- Research institutions for semiconductor research and development
Prior Art
Readers can explore prior patents related to semiconductor device manufacturing processes, gate dielectric layers, conductive materials, and protective layers to gain a deeper understanding of the technology landscape.
Frequently Updated Research
Researchers are constantly exploring new materials and techniques to further improve the performance and efficiency of semiconductor devices. Stay updated on the latest advancements in the field to remain at the forefront of innovation.
Questions about Semiconductor Device Manufacturing
What are the key materials used in the manufacturing of semiconductor devices?
Key materials used in semiconductor device manufacturing include gate dielectric layers, conductive materials, protective layers, and dopants like boron, silicon, carbon, and nitrogen.
How does the application of specific dopants enhance the performance of semiconductor devices?
The application of specific dopants creates protective layers that improve the device's reliability and longevity, leading to enhanced performance overall.
Original Abstract Submitted
A method of manufacturing a semiconductor device includes forming a gate dielectric layer over a channel region, and forming a first conductive layer over the gate dielectric layer. The method further includes forming a protective layer at a surface region of the first conductive layer by implanting a dopant into the surface region of the first conductive layer. The dopant is selected from a group consisting of boron, silicon, carbon, and nitrogen. The method also includes forming a metallic layer by applying a metal containing gas on the protective layer, and removing the metallic layer by a wet etching operation using a solution.