GATE ISOLATION FOR MULTIGATE DEVICE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor(s)

Kuo-Cheng Chiang of Hsinchu County (TW)

Shi Ning Ju of Hsinchu City (TW)

Guan-Lin Chen of Hsinchu County (TW)

Kuan-Ting Pan of Taipei City (TW)

Chih-Hao Wang of Hsinchu County (TW)

GATE ISOLATION FOR MULTIGATE DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18668911 titled 'GATE ISOLATION FOR MULTIGATE DEVICE

The patent application describes gate cutting techniques to form gate isolation fins that isolate metal gates of multigate devices from each other before forming the devices.

Gate cutting techniques create gate isolation fins to separate metal gates of multigate devices.
The fins prevent interference between the metal gates of different devices.
The gate isolation fins consist of dielectric layers with different dielectric constants.
A gate isolation end cap can be added for additional isolation.
This innovation enhances the performance and reliability of multigate devices.

Potential Applications: - Semiconductor manufacturing - Integrated circuit design - Electronics industry

Problems Solved: - Interference between metal gates of multigate devices - Improved isolation and performance of devices

Benefits: - Enhanced device reliability - Increased device performance - Better control over gate structures

Commercial Applications: Title: Advanced Semiconductor Manufacturing Techniques This technology can be used in the production of high-performance electronic devices, leading to improved efficiency and reliability in various industries.

Questions about Gate Cutting Techniques: 1. How do gate isolation fins improve the performance of multigate devices? Gate isolation fins prevent interference between metal gates, enhancing device reliability and performance.

2. What is the significance of using dielectric layers with different dielectric constants in gate isolation fins? The use of dielectric layers with varying constants helps in better isolation of metal gates, leading to improved device performance and reliability.

Original Abstract Submitted

Gate cutting techniques disclosed herein form gate isolation fins to isolate metal gates of multigate devices from one another before forming the multigate devices, and in particular, before forming the metal gates of the multigate devices. An exemplary device includes a first multigate device having first source/drain features and a first metal gate that surrounds a first channel layer and a second multigate device having second source/drain features and a second metal gate that surrounds a second channel layer. A gate isolation fin, which separates the first metal gate and the second metal gate, includes a first dielectric layer having a first dielectric constant and a second dielectric layer having a second dielectric constant disposed over the first dielectric layer. The second dielectric constant is less than the first dielectric constant. A gate isolation end cap may be disposed on the gate isolation fin to provide additional isolation.