18668696. SEMICONDUCTOR MEMORY DEVICE (Samsung Electronics Co., Ltd.)
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR MEMORY DEVICE
This abstract first appeared for US patent application 18668696 titled 'SEMICONDUCTOR MEMORY DEVICE
Original Abstract Submitted
A semiconductor memory device includes a conductive line extending in a first direction, channel regions spaced apart from each other in the first direction over the conductive line and each electrically connected to the conductive line, a back gate electrode spaced apart from the conductive line in a third direction and extending in a second direction between first and second channel regions selected from the channel regions, a pair of word lines spaced apart from each other in the first direction and between the second and third channel regions selected from the channel regions, and epitaxial direct contact plugs extending in the third direction between the channel regions and the conductive line and each including a contact surface contacting one of the channel regions, a protruding contact portion at least partially surrounded by the conductive line, and a vertical contact portion between the contact surface and the protruding contact portion.