18668480. PLASMA PROCESSING WITH INDEPENDENT TEMPERATURE CONTROL simplified abstract (Applied Materials, Inc.)
PLASMA PROCESSING WITH INDEPENDENT TEMPERATURE CONTROL
Organization Name
Inventor(s)
Sandip Niyogi of Oakland CA (US)
Dileep Venkata Sai Vadladi of Sunnyvale CA (US)
Lily Huang of Santa Clara CA (US)
PLASMA PROCESSING WITH INDEPENDENT TEMPERATURE CONTROL - A simplified explanation of the abstract
This abstract first appeared for US patent application 18668480 titled 'PLASMA PROCESSING WITH INDEPENDENT TEMPERATURE CONTROL
Simplified Explanation: The patent application relates to a method of plasma processing using a plasma source that generates helium and nitrogen radicals to treat a substrate within a process chamber.
- Introduces gas with helium and nitrogen into a plasma source
- Generates plasma with helium and nitrogen radicals
- Treats substrate with plasma to produce a treated substrate
- Processing involves contacting plasma with one side of the substrate
Key Features and Innovation:
- Utilizes helium and nitrogen radicals in plasma processing
- Enhances treatment of substrates within a process chamber
- Improves efficiency and effectiveness of plasma processing methods
Potential Applications:
- Semiconductor manufacturing
- Thin film deposition
- Surface modification
- Etching processes
Problems Solved:
- Enhancing substrate treatment
- Improving plasma processing efficiency
- Achieving uniform and precise treatment results
Benefits:
- Enhanced substrate treatment quality
- Increased process efficiency
- Consistent and reliable results
Commercial Applications: Plasma processing technology using helium and nitrogen radicals can be applied in industries such as semiconductor manufacturing, electronics production, and materials science for advanced surface treatments and thin film depositions.
Prior Art: Readers can explore prior art related to plasma processing methods, inductively coupled plasma sources, and the use of helium and nitrogen radicals in plasma treatments.
Frequently Updated Research: Stay informed about the latest advancements in plasma processing technology, inductively coupled plasma sources, and novel applications of helium and nitrogen radicals in surface treatments.
Questions about Plasma Processing Technology: 1. How does the use of helium and nitrogen radicals in plasma processing improve substrate treatment? 2. What are the potential challenges associated with implementing this plasma processing method in industrial settings?
Original Abstract Submitted
Embodiments of the present disclosure generally relate to inductively coupled plasma sources and plasma processing apparatus. In at least one embodiment, a plasma processing method includes introducing a gas including helium and nitrogen into a gas injection channel of a plasma source. The method includes generating a plasma within the gas injection channel. The plasma includes helium radicals and nitrogen radicals. The method includes delivering the plasma from the plasma source to a process chamber including a substrate. The method includes producing a treated substrate by processing the substrate with the plasma within the process chamber, in which processing the substrate includes contacting the plasma including the helium radicals and nitrogen radicals with a first side of the substrate.
