IMAGING SENSOR WITH NEAR-INFRARED ABSORBER

Organization Name

Inventor(s)

Satyadev Hulikal Nagaraja of San Jose CA (US)

IMAGING SENSOR WITH NEAR-INFRARED ABSORBER - A simplified explanation of the abstract

This abstract first appeared for US patent application 18661322 titled 'IMAGING SENSOR WITH NEAR-INFRARED ABSORBER

The abstract describes an imaging sensor with a bulk silicon substrate and a pixel array, including active pixel, optical black pixel, and optical black dummy pixel regions. A near-infrared absorber is positioned between the active and optical black pixel regions, with higher absorption coefficient than silicon.

Simplified Explanation:

An imaging sensor has different pixel regions and a near-infrared absorber for improved absorption of near-infrared light.

Key Features and Innovation:

- Pixel array with active, optical black, and optical black dummy pixel regions - Near-infrared absorber with higher absorption coefficient than silicon

Potential Applications:

- Improved image quality in near-infrared light conditions - Enhanced sensitivity in specific wavelengths - Better performance in low-light environments

Problems Solved:

- Addressing issues with near-infrared light absorption in imaging sensors - Improving overall sensor performance in challenging lighting conditions

Benefits:

- Higher quality images in near-infrared spectrum - Increased sensitivity and accuracy in specific applications - Enhanced performance in low-light environments

Commercial Applications:

- Surveillance systems - Medical imaging devices - Scientific instruments

Questions about Imaging Sensor Technology:

1. How does the near-infrared absorber improve sensor performance? - The near-infrared absorber enhances absorption of near-infrared light, leading to better image quality in specific conditions.

2. What are the potential drawbacks of using a near-infrared absorber in imaging sensors? - The main drawback could be increased manufacturing costs due to the additional component.

Original Abstract Submitted

An example imaging sensor comprises a bulk silicon substrate and a pixel array. The pixel array comprises an active pixel region including an active pixel subarray, an optical black pixel region including an optical black pixel subarray, and an optical black dummy pixel region including an optical black dummy pixel subarray, the optical black dummy pixel region positioned between the active pixel region and the optical black pixel region. A near-infrared absorber is positioned between the active pixel region and the optical black pixel region, the near-infrared absorber comprising a material having a higher near-infrared absorption coefficient than that of silicon.