18660862. Lithography Apparatus and Method simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Lithography Apparatus and Method
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Wei-Chun Yen of Tainan City (TW)
Shang-Chieh Chien of New Taipei City (TW)
Heng-Hsin Liu of New Taipei City (TW)
Lithography Apparatus and Method - A simplified explanation of the abstract
This abstract first appeared for US patent application 18660862 titled 'Lithography Apparatus and Method
The abstract describes a method involving heating and cooling processes for components of an extreme ultraviolet source.
- Heating a byproduct transport ring located beneath the vanes of the extreme ultraviolet source.
- Sequentially heating the byproduct transport ring and then the vanes.
- Cooling the vanes after heating.
- Cooling the byproduct transport ring after cooling the vanes.
- This method aims to optimize the performance and longevity of the extreme ultraviolet source.
Potential Applications: - Semiconductor manufacturing - Lithography processes - Optical coatings
Problems Solved: - Enhancing the efficiency of extreme ultraviolet sources - Improving the durability of components in extreme environments
Benefits: - Increased productivity in semiconductor fabrication - Extended lifespan of extreme ultraviolet source components
Commercial Applications: Title: Enhanced Extreme Ultraviolet Source for Semiconductor Manufacturing This technology can be utilized in the semiconductor industry to improve production processes and reduce downtime, leading to cost savings and enhanced product quality.
Questions about the technology: 1. How does the heating and cooling process impact the overall performance of the extreme ultraviolet source? - The heating and cooling process helps maintain the stability and efficiency of the components, ultimately improving the overall performance of the source.
2. What are the specific challenges faced by extreme ultraviolet sources in semiconductor manufacturing? - Extreme ultraviolet sources face challenges related to component durability and performance optimization, which this method aims to address.
Original Abstract Submitted
In an embodiment, a method includes: heating a byproduct transport ring of an extreme ultraviolet source, the byproduct transport ring disposed beneath vanes of the extreme ultraviolet source; after heating the byproduct transport ring for a first duration, heating the vanes; after heating the vanes, cooling the vanes; and after cooling the vanes for a second duration, cooling the byproduct transport ring.