18659726. THREE-DIMENSIONAL SEMICONDUCTOR DEVICE (SAMSUNG ELECTRONICS CO., LTD.)
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE
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THREE-DIMENSIONAL SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18659726 titled 'THREE-DIMENSIONAL SEMICONDUCTOR DEVICE
Original Abstract Submitted
Disclosed is a three-dimensional semiconductor device comprising a substrate including first and second regions, a first active section on the first region and including a first lower channel pattern and a first lower source/drain pattern, a second active section on the first active section and including a first upper channel pattern and a first upper source/drain pattern, a third active section on the second region and including a second lower channel pattern and a second lower source/drain pattern, a fourth active section on the third active section and including a second upper channel pattern and a second upper source/drain pattern, and a gate electrode on the first and second lower channel patterns and the first and second upper channel patterns. A first width in a first direction of the first lower channel pattern is greater than a second width in the first direction of the second lower channel pattern.