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18654727. IMAGE SENSOR (SAMSUNG ELECTRONICS CO., LTD.)

From WikiPatents

IMAGE SENSOR

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Kyungduck Lee of Suwon-si KR

Taesub Jung of Suwon-si KR

Masato Fujita of Suwon-si KR

Yunha Na of Suwon-si KR

Seungki Baek of Suwon-si KR

Doosik Seol of Suwon-si KR

Sungmin An of Suwon-si KR

Seungki Jung of Suwon-si KR

IMAGE SENSOR

This abstract first appeared for US patent application 18654727 titled 'IMAGE SENSOR

Original Abstract Submitted

An image sensor includes pixels, each including two photodiodes arranged side-by-side in a first direction, a deep trench isolation structure, a floating diffusion region, and transfer gates. The deep trench isolation structure includes an inner structure that extends in a second direction perpendicular to the first direction and that separates the two PDs of pixel from each other in the first direction, and an outer structure that extends in the first and second directions and that separates the pixels from each other in the first and second directions. The floating diffusion region is arranged between a center portion of the outer structure extending in the first direction and an edge of the inner structure. The transfer gates are disposed adjacent to the floating diffusion region such that one or more transfer gates are disposed on each photodiode. For each pixel, the two photodiodes share the floating diffusion region.

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