SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

Inventor(s)

Nam Jae Lee of Icheon-si Gyeonggi-do (KR)

SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18653585 titled 'SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

The semiconductor memory device described in the abstract includes a unique structure with various layers and patterns to enhance its performance and efficiency.

Source layer
Channel structure extending from within the source layer
Source-channel contact layer surrounding the channel structure
First select gate layer overlapping with the source-channel contact layer
Stack with interlayer insulating layers and conductive patterns
First insulating pattern formed thicker between the first select gate layer and the channel structure

Key Features and Innovation:

Complex layering and patterning for improved memory device functionality
Enhanced performance and efficiency through optimized structure design
Specific placement of layers and patterns to maximize memory storage capabilities

Potential Applications:

Semiconductor memory devices in various electronic devices
Data storage systems in computers and mobile devices
High-speed data processing applications

Problems Solved:

Addressing the need for higher performance and efficiency in semiconductor memory devices
Optimizing memory storage capabilities in a compact design

Benefits:

Improved data processing speed and efficiency
Enhanced memory storage capacity in a compact device
Increased overall performance of electronic devices utilizing this memory technology

Commercial Applications:

Data centers
Consumer electronics manufacturers
Semiconductor industry suppliers

Questions about the technology: 1. How does the unique layering and patterning of this semiconductor memory device contribute to its performance? 2. What specific advantages does the first insulating pattern provide in the overall functionality of the device?

Frequently Updated Research: Ongoing research in semiconductor memory technology focuses on further optimizing the structure and design of memory devices for even greater performance and efficiency.

Original Abstract Submitted

There are provided a semiconductor memory device and a manufacturing method thereof. The semiconductor memory device includes: a source layer; a channel structure extending in a first direction from within the source layer; a source-channel contact layer surrounding the channel structure on the source layer; a first select gate layer overlapping with the source-channel contact layer and surrounding the channel structure; a stack including interlayer insulating layers and conductive patterns that are alternately stacked in the first direction and surrounding the channel structure, the stack overlapping with the first select gate layer; and a first insulating pattern that is formed thicker between the first select gate layer and the channel structure than between the stack and the channel structure.