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18653475. SEMICONDUCTOR DEVICE (SAMSUNG ELECTRONICS CO., LTD.)

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SEMICONDUCTOR DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Duckseoung Kang of Suwon-si KR

Sangdeok Kwon of Suwon-si KR

Gibum Kim of Suwon-si KR

SEMICONDUCTOR DEVICE

This abstract first appeared for US patent application 18653475 titled 'SEMICONDUCTOR DEVICE

Original Abstract Submitted

A semiconductor device may include first, second, and third source/drain patterns, semiconductor patterns between the first and third source/drain patterns, a gate dielectric layer in contact with the semiconductor patterns, a gate electrode in contact with the gate dielectric layer, blocking semiconductor patterns between the first and second source/drain patterns, a blocking dielectric layer in contact with the blocking semiconductor patterns, and a blocking electrode in contact with the blocking dielectric layer. The blocking dielectric layer may include a first layer in contact with the first and second source/drain patterns, a second layer in contact with the blocking electrode, and a third layer between the first and second layers. A dielectric material of the third layer may be different than a dielectric material of the first layer and that of the second layer.

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