18653285. MEMORY DEVICE AND MEMORY SYSTEM (SAMSUNG ELECTRONICS CO., LTD.)
MEMORY DEVICE AND MEMORY SYSTEM
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MEMORY DEVICE AND MEMORY SYSTEM
This abstract first appeared for US patent application 18653285 titled 'MEMORY DEVICE AND MEMORY SYSTEM
Original Abstract Submitted
A memory device includes a reference voltage generator configured to generate a reference voltage, and a data input/output (I/O) buffer configured to receive a data signal having a first phase, generate a phase control signal having a second phase opposite to the first phase, and generate an output signal based on the data signal, the phase control signal, and the reference voltage.