18652010. SEMICONDUCTOR DEVICES INCLUDING SUBSTRATE STRUCTURE (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICES INCLUDING SUBSTRATE STRUCTURE
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Inventor(s)
SEMICONDUCTOR DEVICES INCLUDING SUBSTRATE STRUCTURE
This abstract first appeared for US patent application 18652010 titled 'SEMICONDUCTOR DEVICES INCLUDING SUBSTRATE STRUCTURE
Original Abstract Submitted
A semiconductor device may include a first semiconductor structure including a first device layer on an upper surface of a first substrate structure, the first device layer including a first region of the semiconductor device; and a second semiconductor structure including a second device layer on a lower surface of a second substrate structure, the second device layer connected to the first device layer and including a second region of the semiconductor device. The first substrate structure may include a first wafer and a second wafer on the first wafer. The second wafer may be in contact with the first device layer. The second substrate structure may include a third wafer and a fourth wafer on a lower surface of the third wafer. The fourth wafer may be in contact with the second device layer. An upper surface of the second wafer may be a (100) crystal plane.
- SAMSUNG ELECTRONICS CO., LTD.
- Jonggu Lee of Suwon-si KR
- Hyeonjin Kim of Suwon-si KR
- Kyungwon Kang of Suwon-si KR
- Hyunjae Kang of Suwon-si KR
- Youngha Kim of Suwon-si KR
- Jeonggil Kim of Suwon-si KR
- Jinman Kim of Suwon-si KR
- Sunghyup Kim of Suwon-si KR
- Sanghoon Lee of Suwon-si KR
- H01L29/04
- H01L23/00
- H01L23/498
- CPC H10D62/405