18649568. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
Inventor(s)
Masaharu Shimabayashi of Ibo Hyogo JP
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18649568 titled 'METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Original Abstract Submitted
In a method for manufacturing a semiconductor device according to one embodiment, an opening is formed in an upper surface of a first semiconductor region of a first conductivity type. In the method, a gap is formed at a lower portion of the opening by performing atomic layer deposition to plug the opening by forming a first insulating layer at an upper portion of the opening. In the atomic layer deposition, adsorption of an inhibitor to an inner surface of the lower portion of the opening, or termination of dangling bonds of a semiconductor material present at the inner surface of the lower portion of the opening, and adsorption of a precursor to an inner surface of the upper portion of the opening are repeatedly performed.