METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

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METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18646397 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

The semiconductor device manufacturing method involves forming a trench on the top surface of a semiconductor substrate, burying an insulated gate electrode structure in the trench, and creating a base region and main electrode regions of different conductivity types.

Trench is formed on the top surface of the semiconductor substrate.
Insulated gate electrode structure is buried in the trench.
Base region of a different conductivity type is formed at the upper part of the semiconductor substrate.
First main electrode region is created at the upper part of the base region.
Second main electrode region is formed on the bottom surface of the semiconductor substrate.

Potential Applications: - Semiconductor manufacturing industry - Electronics industry - Power electronics

Problems Solved: - Efficient manufacturing of semiconductor devices - Enhanced performance of semiconductor devices

Benefits: - Improved conductivity and performance - Enhanced efficiency in power electronics - Cost-effective manufacturing process

Commercial Applications: Title: "Advanced Semiconductor Device Manufacturing Method" This technology can be used in the production of various semiconductor devices, such as power transistors, integrated circuits, and electronic components. The method offers improved performance and efficiency, making it attractive for companies in the semiconductor and electronics industries.

Questions about the technology: 1. How does adjusting the preparation condition based on carbon concentration in the semiconductor substrate impact the performance of the device? - By adjusting the preparation condition based on carbon concentration, the conductivity and overall efficiency of the semiconductor device can be optimized. 2. What are the key advantages of burying an insulated gate electrode structure in the trench during manufacturing? - Burying an insulated gate electrode structure in the trench helps in improving the insulation and overall performance of the semiconductor device.

Original Abstract Submitted

A method of manufacturing the semiconductor device including: forming a trench from a top surface side of a semiconductor substrate of a first conductivity-type; burying an insulated gate electrode structure in the trench; forming a base region of a second conductivity-type at an upper part of the semiconductor substrate so as to be in contact with the trench; forming a first main electrode region of the first conductivity-type at an upper part of the base region so as to be in contact with the trench; and forming a second main electrode region of the second conductivity-type on a bottom surface side of the semiconductor substrate, where a preparation condition for at least either the base region or the second main electrode region are adjusted depending on a carbon concentration in the semiconductor substrate.