COPPER ALLOY FILM WITH HIGH STRENGTH AND HIGH CONDUCTIVITY

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COPPER ALLOY FILM WITH HIGH STRENGTH AND HIGH CONDUCTIVITY - A simplified explanation of the abstract

This abstract first appeared for US patent application 18645905 titled 'COPPER ALLOY FILM WITH HIGH STRENGTH AND HIGH CONDUCTIVITY

Simplified Explanation: The patent application describes a method of forming a component by electrochemically depositing a metallic material onto a carrier component with specific characteristics.

Key Features and Innovation:

Electrochemically depositing a metallic material onto a carrier component to a thickness of greater than 50 microns.
The metallic material consists of crystal grains, with at least 90% of the crystal grains having nanotwin boundaries.
The metallic material is a Copper-Silver alloy (Cu—Ag) with a silver content between about 0.5-2 at %.

Potential Applications: The technology could be used in various industries such as electronics, aerospace, and automotive for manufacturing components with enhanced properties.

Problems Solved: This technology addresses the need for components with improved strength, durability, and conductivity.

Benefits: The benefits of this technology include increased component performance, reliability, and longevity.

Commercial Applications: The technology could be applied in the production of high-performance electronic devices, aircraft components, and automotive parts, leading to improved overall product quality and performance in the market.

Questions about the Technology: 1. What are the specific advantages of using a Copper-Silver alloy in this method? 2. How does the presence of nanotwin boundaries in the crystal grains enhance the properties of the metallic material?

Frequently Updated Research: Researchers are continuously exploring new applications and advancements in the field of electrochemical deposition of metallic materials for various industrial purposes.

Original Abstract Submitted

A method of forming a component can include electrochemically depositing a metallic material onto a carrier component to a thickness of greater than 50 microns. The metallic material can include crystal grains and at least 90% of the crystal grains can include nanotwin boundaries. The metallic material can include a Copper-Silver alloy (Cu—Ag) with between about 0.5-2 at %-Ag.