18645765. INTEGRATED CIRCUIT DEVICE (SAMSUNG ELECTRONICS CO., LTD.)
INTEGRATED CIRCUIT DEVICE
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INTEGRATED CIRCUIT DEVICE
This abstract first appeared for US patent application 18645765 titled 'INTEGRATED CIRCUIT DEVICE
Original Abstract Submitted
An integrated circuit device includes a fin-type active region extending in a first horizontal direction on a substrate, a plurality of nanosheets facing a fin top of the fin-type active region, a gate line on the fin-type active region, the gate line surrounding each of the nanosheets and extending in a second horizontal direction, and a source/drain region on the fin-type active region. The gate line includes a main gate portion on the nanosheet stack, a first sub gate portion, a second sub gate portion, and a third sub gate portion. A width of the first sub gate portion in the first horizontal direction is greater than or equal to a width of the third sub gate portion in the first horizontal direction and the width of the first sub gate portion is less than a width of the second sub gate portion in the first horizontal direction.