18642454. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME (KABUSHIKI KAISHA TOSHIBA)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
Yuichiro Sasaki of Nonoichi Ishikawa JP
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
This abstract first appeared for US patent application 18642454 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Original Abstract Submitted
According to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, a gate electrode, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a second electrode. The gate electrode is located on the first semiconductor region with a gate insulating layer interposed. The second semiconductor region faces the gate electrode via the gate insulating layer. The second semiconductor region includes: a first portion; a second portion located on the first portion and having a higher second-conductivity-type impurity concentration than the first portion; and a third portion positioned between the second portion and the gate electrode and having a higher concentration of a first element than the second portion. The first element is at least one selected from the group consisting of carbon, germanium, antimony, and indium.