TRANSISTOR CONFIGURATIONS FOR VERTICAL MEMORY ARRAYS

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TRANSISTOR CONFIGURATIONS FOR VERTICAL MEMORY ARRAYS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18638480 titled 'TRANSISTOR CONFIGURATIONS FOR VERTICAL MEMORY ARRAYS

Simplified Explanation: The patent application describes methods, systems, and devices for transistor configurations in vertical memory arrays, specifically focusing on a multi-transistor architecture that couples pillars with bit lines.

Memory device implements a two-transistor architecture to connect pillars with bit lines.
Conductive pillar extends through levels of memory array.
Pillar is coupled with a first bit line via a first transistor and a second bit line via a second transistor.
To access a memory cell, the memory device biases a word line to a first access voltage, biases one of the bit lines to a second access voltage, activates one of the transistors to couple the pillar with the bit line, and deactivates the other transistor to isolate the pillar.

Key Features and Innovation:

Implementation of a multi-transistor architecture in vertical memory arrays.
Use of conductive pillars to connect with bit lines.
Efficient access to memory cells through transistor activation and deactivation.

Potential Applications:

High-density memory devices.
Faster access to memory cells.
Improved data storage and retrieval in electronic devices.

Problems Solved:

Addressing the need for efficient and compact memory architectures.
Enhancing the performance of memory devices in terms of speed and reliability.

Benefits:

Increased data storage capacity.
Faster data access and retrieval.
Enhanced overall performance of electronic devices.

Commercial Applications: Vertical memory arrays with transistor configurations can be utilized in various electronic devices such as smartphones, tablets, computers, and servers to improve memory performance and efficiency.

Questions about Transistor Configurations for Vertical Memory Arrays: 1. How do transistor configurations in vertical memory arrays impact data storage efficiency? 2. What are the potential challenges in implementing multi-transistor architectures in memory devices?

Frequently Updated Research: Ongoing research in the field of memory devices focuses on improving the speed, capacity, and reliability of data storage systems through innovative transistor configurations in vertical memory arrays.

Original Abstract Submitted

Methods, systems, and devices for transistor configurations for vertical memory arrays are described. A memory device may implement a multi-transistor architecture, such as a two-transistor architecture, that is operable to couple pillars with bit lines. For example, a memory device may include a conductive pillar that extends through levels of a memory array. The pillar may be coupled with a first bit line via a first transistor and coupled with a second bit line via a second transistor. To access a memory cell coupled with the pillar, the memory device may bias a word line coupled with the memory cell to a first access voltage, bias one of the bit lines to a second access voltage, activate one of the transistors to couple the pillar with the one of the bit lines, and deactivate the other transistor to isolate the pillar from the other of the bit lines.