18635929. MRAM REFERENCE CURRENT simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
MRAM REFERENCE CURRENT
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
MRAM REFERENCE CURRENT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18635929 titled 'MRAM REFERENCE CURRENT
The abstract describes a reference circuit for generating a reference current using resistive elements, including at least one magnetic tunnel junction (MTJ). A control circuit is connected to the MTJ to control the flow of current through it in both forward and inverse directions to produce the reference current.
- The reference circuit includes resistive elements and at least one MTJ.
- A control circuit is used to regulate the current flow through the MTJ.
- The MTJ can be operated in both forward and inverse directions to generate the reference current.
Potential Applications: - This technology can be used in precision current sources. - It can be applied in sensor systems requiring stable reference currents.
Problems Solved: - Provides a stable and accurate reference current. - Offers a compact solution for generating reference currents.
Benefits: - Improved precision and stability in current generation. - Compact design for space-constrained applications.
Commercial Applications: Title: Innovative Reference Circuit for Stable Current Generation This technology can be utilized in industries such as: - Semiconductor manufacturing - Medical devices - Aerospace and defense
Prior Art: Readers can explore prior patents related to reference current generation circuits and magnetic tunnel junctions.
Frequently Updated Research: Stay updated on advancements in magnetic tunnel junction technology and its applications in current generation circuits.
Questions about the technology: 1. How does the control circuit ensure stable current generation through the MTJ? 2. What are the advantages of using magnetic tunnel junctions in reference current circuits?
Original Abstract Submitted
A reference circuit for generating a reference current includes a plurality of resistive elements including at least one magnetic tunnel junction (MTJ). A control circuit is coupled to a first terminal of the at least one MTJ and is configured to selectively flow current through the at least one MTJ in the forward and inverse direction to generate a reference current.