18634162. SEMICONDUCTOR DEVICE (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kyeong Beom Park of Suwon-si KR
SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18634162 titled 'SEMICONDUCTOR DEVICE
Original Abstract Submitted
Provided is a semiconductor device and method of manufacturing same, the semiconductor device including: a substrate; an interlayer insulating layer on the substrate; an upper wiring trench in the interlayer insulating layer; an upper wiring layer including an upper wiring barrier layer along a sidewall of the upper wiring trench and a bottom surface of the upper wiring trench, and an upper wiring filling layer on the upper wiring barrier layer, wherein the upper wiring filling layer fills an inside of the upper wiring trench; and a first etching stop layer on each of an upper surface of the interlayer insulating layer and an upper surface of the upper wiring layer, the first etching stop layer including: a first portion in contact with an upper surface of the upper wiring filling layer; a second portion in contact with an upper surface of the upper wiring barrier layer; and a third portion in contact with the upper surface of the interlayer insulating layer, wherein a percentage of nitrogen (N) in the first portion is greater than a percentage of nitrogen (N) in the second portion.