SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

This abstract first appeared for US patent application 18632579 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Original Abstract Submitted

A semiconductor device may include a base insulation layer, a channel layer on a first surface of the base insulation layer, a first source/drain pattern and a second source/drain pattern spaced apart from each other in a first direction on a first surface of the base insulating layer with the channel layer therebetween, a gate structure on the first surface of the base insulation layer and extending in a second direction crossing the first direction, a lower wire structure on a second surface of the base insulation layer, and a through electrode spaced apart from the gate structure with the first source/drain pattern between the through electrode and the gate structure. The through electrode may penetrate the base insulation layer and electrically connect the first source/drain pattern to the lower wire structure. The first direction may be parallel to the first surface of the base insulation layer.