18630286. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME (Samsung Electronics Co., Ltd.)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
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SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
This abstract first appeared for US patent application 18630286 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Original Abstract Submitted
A semiconductor device may include an active pattern on a substrate, defined by a trench, and extending in a first direction, a device isolation layer filling the trench, the substrate including a first surface in contact with a bottom surface of the device isolation layer and a second surface opposite to the first surface, a gate electrode extending in a second direction and cross the active pattern, the second direction crossing the first direction, a first division structure spaced apart from the gate electrode in the first and extending in the second direction, and a power delivery network layer on the second surface of the substrate. The first division structure may penetrate the device isolation layer, and a bottom surface of the first division structure may be coplanar with the second surface of the substrate.