POWER SUPPLY GENERATOR ASSIST

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

POWER SUPPLY GENERATOR ASSIST - A simplified explanation of the abstract

This abstract first appeared for US patent application 18626718 titled 'POWER SUPPLY GENERATOR ASSIST

The disclosed system and method aim to reduce on-chip power IR drop caused by large write current, increase the write IO number, improve write throughput, and suppress write voltage ripple at the start and end of a write operation, particularly in relation to stabilizing the bit line voltage for MRAMs.

The system and method can stabilize the bit line voltage of any memory configuration that draws large currents during short write pulses.
It can selectively assist a power supply generator in supplying adequate power to a load at times of large power consumption.
The innovation addresses the challenges of power IR drop and voltage ripple during write operations in memory devices.
By stabilizing the bit line voltage, the system enhances the reliability and efficiency of write operations in MRAMs and other memory configurations.
This technology can significantly improve the overall performance and longevity of memory devices.

Potential Applications: This technology can be applied in various memory devices such as MRAMs, DRAMs, and SRAMs to enhance their write operation efficiency and reliability.

Problems Solved: The system addresses issues related to power IR drop, write current limitations, and voltage ripple during write operations in memory devices.

Benefits: Improved write operation efficiency, increased write throughput, enhanced reliability, and reduced power consumption in memory devices.

Commercial Applications: Title: Enhanced Write Operation System for Memory Devices This technology has significant commercial applications in the semiconductor industry, specifically in the development of advanced memory devices with improved performance and reliability.

Prior Art: Researchers can explore prior studies on power management in memory devices, write operation optimization, and voltage stabilization techniques in semiconductor devices.

Frequently Updated Research: Researchers are continually exploring new methods to optimize power management and write operations in memory devices, which can further enhance the efficiency and reliability of these devices.

Questions about the Technology: 1. How does this technology impact the overall performance of memory devices? This technology significantly improves the efficiency and reliability of write operations in memory devices, leading to enhanced overall performance.

2. What are the potential applications of this innovation beyond MRAMs? This innovation can be applied to various memory configurations that draw large currents during write pulses, improving their write operation efficiency and reliability.

Original Abstract Submitted

The disclosed system and method reduce on-chip power IR drop caused by large write current, to increase the write IO number or improve write throughput and to suppress write voltage ripple at the start and end of a write operation. The disclosed systems and methods are described in relation to stabilizing the bit line voltage for MRAMs, however, the disclosed systems and methods can be used to stabilize the bit line voltage of any memory configuration that draws large currents during short write pulses or, more generally, to selectively assist a power supply generator in supplying adequate power to a load at times of large power consumption.