18626242. RESIST UNDERLAYER COMPOSITION (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
RESIST UNDERLAYER COMPOSITION
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
RESIST UNDERLAYER COMPOSITION
This abstract first appeared for US patent application 18626242 titled 'RESIST UNDERLAYER COMPOSITION
Original Abstract Submitted
A resist underlayer composition for extreme ultraviolet lithography is provided. The composition includes a first polymer, a second polymer, an acid generator and a solvent. The first polymer includes a first polymer backbone and an etching resistance enhancement unit covalently bonded to the first polymer backbone via a first linker. The etching resistance enhancement unit includes a silicon-containing unit including silicon-oxygen bonds or a metal-containing unit including metal-oxygen bonds. The second polymer includes a second polymer backbone and a crosslinker unit covalently bonded to the second polymer backbone via a second linker. The crosslinker unit includes one or more crosslinkable groups.