18625761. SEMICONDUCTOR DEVICE (KABUSHIKI KAISHA TOSHIBA)
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Shunsuke Kamiya of Komatsu Ishikawa JP
SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18625761 titled 'SEMICONDUCTOR DEVICE
Original Abstract Submitted
A semiconductor device according to an embodiment includes: first and second electrodes respectively provided on first and second main surfaces of a semiconductor layer; a first semiconductor region of a first conductivity type; a plurality of insulating regions formed to extend in a second direction orthogonal to a first direction from the second electrode toward the first electrode; a plurality of third electrodes provided in the plurality of insulating regions; a second semiconductor region of a second conductivity type sandwiched between the plurality of insulating regions, formed to extend in the second direction; a third semiconductor region of the first conductivity type located between the second semiconductor region and the first electrode; and a carrier conduction part formed to extend in the second direction in the second semiconductor region and electrically connected to the first electrode via a connection part not penetrating the third semiconductor region.