FILM FORMING APPARATUS AND FILM FORMING METHOD

Organization Name

Tokyo Electron Limited

Inventor(s)

Kensaku Narushima of Nirasaki City (JP)

Takashi Kobayashi of Nirasaki City (JP)

Shinya Okabe of Nirasaki City (JP)

Takashi Sakuma of Nirasaki City (JP)

Kunihiro Tada of Nirasaki City (JP)

Satoshi Yoshida of Nirasaki City (JP)

FILM FORMING APPARATUS AND FILM FORMING METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 18624402 titled 'FILM FORMING APPARATUS AND FILM FORMING METHOD

The patent application describes a film forming apparatus that includes a processing container with a depressurized interior, an electrode generating an electric field in the processing space, a radio frequency power supply providing power to the electrode, a stage for holding a substrate, and a gas introduction part for vaporizing zirconium chloride into the processing space.

The processing container is designed to be depressurized to create a controlled environment for film formation.
An electrode generates an electric field in the processing space to facilitate the film forming process.
A radio frequency power supply supplies power to the electrode to maintain the electric field.
A stage inside the container holds the substrate in place during the film forming process.
The gas introduction part, made of metal and grounded, introduces vaporized zirconium chloride into the processing space.

Potential Applications: - Thin film deposition for electronic devices - Coating applications in the semiconductor industry - Surface modification for medical devices

Problems Solved: - Controlled film formation in a depressurized environment - Efficient vaporization and introduction of film forming gas - Precise and uniform coating on substrates

Benefits: - Improved film quality and uniformity - Enhanced control over the film forming process - Increased efficiency and productivity in thin film deposition

Commercial Applications: Title: Advanced Thin Film Deposition Apparatus for Semiconductor Manufacturing This technology can be utilized in semiconductor manufacturing processes for precise and uniform thin film deposition, leading to improved device performance and reliability. The market implications include increased production efficiency and higher quality semiconductor products.

Questions about the technology: 1. How does the depressurized interior of the processing container contribute to the film forming process? 2. What advantages does the use of vaporized zirconium chloride offer in thin film deposition applications?

Original Abstract Submitted

A film forming apparatus, including a processing container, an interior of which is configured to be depressurized, an electrode configured to generate an electric field in a processing space inside the processing container, a radio frequency power supply configured to supply radio frequency power to the electrode, a stage arranged in the processing container to place a substrate thereon, and a film forming gas introduction part configured to introduce vaporized zirconium chloride into the processing space. The film forming gas introduction part is made of a metal and is grounded.