18614757. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (SK Hynix Inc.)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
Jae Hee Song of Gyeonggi-do (KR)
Dong Hyun Lee of Gyeonggi-do (KR)
Kyung Woong Park of Gyeonggi-do (KR)
Cheol Hwan Park of Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18614757 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
The semiconductor device described in the abstract consists of a lower electrode, a supporter, a dielectric layer, an upper electrode, a first interfacial layer, and a second interfacial layer.
- The first interfacial layer is a stack of a metal oxide and a metal nitride.
- The second interfacial layer is disposed between the dielectric layer and the upper electrode.
- The supporter supports an outer wall of the lower electrode.
- The first interfacial layer is selectively formed on a surface of the lower electrode.
- The second interfacial layer is a metal nitride contacting the dielectric layer.
Potential Applications: This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications.
Problems Solved: This innovation addresses the need for improved interfacial layers in semiconductor devices to enhance performance and reliability.
Benefits: The use of specific metal oxide and metal nitride layers can improve the overall efficiency and durability of semiconductor devices.
Commercial Applications: This technology has potential commercial applications in the electronics industry, particularly in the development of high-performance electronic devices.
Questions about the technology: 1. How does the specific composition of the first interfacial layer contribute to the performance of the semiconductor device? 2. What are the potential challenges in scaling up the production of semiconductor devices using this technology?
Frequently Updated Research: Researchers are continually exploring new materials and techniques to further enhance the performance of semiconductor devices.
Original Abstract Submitted
A semiconductor device includes a lower electrode; a supporter supporting an outer wall of the lower electrode; a dielectric layer formed on the lower electrode and the supporter; an upper electrode on the dielectric layer; a first interfacial layer disposed between the lower electrode and the dielectric layer and selectively formed on a surface of the lower electrode among the lower electrode and the supporter; and a second interfacial layer disposed between the dielectric layer and the upper electrode, wherein the first interfacial layer is a stack of a metal oxide contacting the lower electrode and a metal nitride contacting the dielectric layer.