SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

This abstract first appeared for US patent application 18613829 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Original Abstract Submitted

A semiconductor device includes a first channel layer and a second channel layer spaced from each other in a first direction and each include a two-dimensional (2D) semiconductor material, a first source electrode between the first channel layer and the second channel layer to be simultaneously in contact with the first channel layer and the second channel layer, a first drain electrode between the first channel layer and the second channel layer to be spaced apart from the first source electrode in a second direction perpendicular to the first direction and simultaneously in contact with the first channel layer and the second channel layer, a first gate electrode arranged in a first internal space surrounded by the first source electrode, the first drain electrode, the first channel layer, and the second channel layer, and a first gate insulating layer surrounding the first gate electrode in the first internal space.