SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 18611728 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

The semiconductor device described in the abstract includes a semiconductor substrate with a drift region of a first conductivity type, a transistor portion with a collector region of a second conductivity type and an emitter region of the first conductivity type, and a diode portion with a cathode region of the first conductivity type.

The semiconductor device has an avalanche breakdown voltage in the diode portion that is 0.7 times or more and less than 1 time the avalanche breakdown voltage in the transistor portion.

The emitter region of the transistor portion has a higher doping concentration than the drift region of the semiconductor substrate.

The cathode region of the diode portion is in contact with the lower surface of the semiconductor substrate.

The collector region of the transistor portion is in contact with the lower surface of the semiconductor substrate.

The semiconductor device is designed to optimize the avalanche breakdown voltages in different regions for improved performance.

Potential Applications: - Power electronics - Semiconductor devices - Electrical engineering

Problems Solved: - Optimizing avalanche breakdown voltages in different regions of a semiconductor device - Enhancing performance and efficiency of power electronics

Benefits: - Improved performance and efficiency in power electronics - Enhanced reliability and durability of semiconductor devices

Commercial Applications: Title: "Advanced Semiconductor Device for Power Electronics Applications" This technology can be used in various power electronics applications such as inverters, converters, and motor drives, leading to more efficient and reliable electronic systems in industries like automotive, renewable energy, and industrial automation.

Prior Art: Readers can explore prior art related to semiconductor devices, power electronics, and avalanche breakdown voltages in semiconductor technology to gain a deeper understanding of the innovation presented in this patent application.

Frequently Updated Research: Researchers are constantly exploring new ways to optimize semiconductor devices for power electronics applications, including advancements in avalanche breakdown voltage control and performance enhancement. Stay updated on the latest research in this field to leverage cutting-edge technologies for future developments.

Questions about Semiconductor Devices with Optimized Avalanche Breakdown Voltages: 1. How does the optimization of avalanche breakdown voltages in different regions of a semiconductor device impact its overall performance and efficiency? 2. What are the key factors to consider when designing semiconductor devices with varying avalanche breakdown voltages for different regions?

Original Abstract Submitted

Provided is a semiconductor device including: a semiconductor substrate which has an upper surface and a lower surface and is provided with a drift region of a first conductivity type; a transistor portion which includes a collector region of a second conductivity type in contact with the lower surface of the semiconductor substrate and an emitter region of the first conductivity type provided in contact with the upper surface of the semiconductor substrate and having a doping concentration higher than that of the drift region; and a diode portion which includes a cathode region of the first conductivity type in contact with the lower surface of the semiconductor substrate, and an avalanche breakdown voltage in the diode portion is 0.7 times or more and less than 1 time an avalanche breakdown voltage in the transistor portion.