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18610150. SEMICONDUCTOR DEVICE WITH SLANTED FIELD PLATE (Texas Instruments Incorporated)

From WikiPatents

SEMICONDUCTOR DEVICE WITH SLANTED FIELD PLATE

Organization Name

Texas Instruments Incorporated

Inventor(s)

[[:Category:Jonas H�henberger of Kissing DE|Jonas H�henberger of Kissing DE]][[Category:Jonas H�henberger of Kissing DE]]

Ujwal Radhakrishna of San Jose CA US

Michael Lueders of Freising DE

Meng-Chia Lee of Allen TX US

Chang Soo Suh of Allen TX US

Zhikai Tang of Sunnyvale CA US

Jungwoo Joh of Allen TX US

Timothy Bryan Merkin of Princeton TX US

Stefan Herzer of Marzling DE

Bernhard Ziegltrum of Freising DE

Helmut Rinck of Gammelsdorf DE

Michael Hans Enzelberger-heim of Munich DE

Ercuement Hasanoglu of Augsburg DE

SEMICONDUCTOR DEVICE WITH SLANTED FIELD PLATE

This abstract first appeared for US patent application 18610150 titled 'SEMICONDUCTOR DEVICE WITH SLANTED FIELD PLATE

Original Abstract Submitted

The present disclosure generally relates to a semiconductor device having a slanted field plate. In an example, a semiconductor device includes a semiconductor substrate, a gate, a drain contact, a source contact, and a field plate. The gate is on a surface of the semiconductor substrate. The drain contact and a source contact are on the semiconductor substrate. The field plate is over the surface of the semiconductor substrate and extends from one side of the gate towards the drain contact. The field plate includes multiple field plate portions. Each of the multiple field plate portions has a uniform respective slope with respect to the surface, and the multiple field plate portions have different slopes.

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