18609278. INSULATING FILM FORMING METHOD AND SUBSTRATE PROCESSING SYSTEM simplified abstract (Tokyo Electron Limited)
INSULATING FILM FORMING METHOD AND SUBSTRATE PROCESSING SYSTEM
Organization Name
Inventor(s)
Daisuke Oba of Nirasaki City (JP)
Masafumi Ishida of Nirasaki City (JP)
Nobuo Matsuki of Nirasaki City (JP)
Yoshinori Morisada of Nirasaki City (JP)
INSULATING FILM FORMING METHOD AND SUBSTRATE PROCESSING SYSTEM - A simplified explanation of the abstract
This abstract first appeared for US patent application 18609278 titled 'INSULATING FILM FORMING METHOD AND SUBSTRATE PROCESSING SYSTEM
Simplified Explanation: The patent application describes a method of forming an insulating film on a substrate with a recess using plasma polymerization and vaporization techniques.
- The method involves preparing the substrate in a processing chamber, forming a flowable oligomer film on the substrate through plasma polymerization, and then partially vaporizing and removing the flowable oligomer film by controlling the chamber pressure.
- Subsequently, the insulating film is formed in the recess by supplying energy to the substrate to cure the flowable oligomer.
Key Features and Innovation:
- Formation of insulating film on a substrate with a recess using plasma polymerization.
- Vaporization of flowable oligomer film to control its thickness.
- Curing of flowable oligomer to form a stable insulating film.
Potential Applications: This technology can be applied in the semiconductor industry for insulating layers in electronic devices, in the manufacturing of microelectromechanical systems (MEMS), and in various nanotechnology applications.
Problems Solved:
- Precise control over insulating film thickness.
- Efficient formation of insulating films in recessed areas.
- Enhanced stability and durability of insulating films.
Benefits:
- Improved performance and reliability of electronic devices.
- Cost-effective manufacturing process.
- Versatile application in various industries.
Commercial Applications: Insulating films produced using this method can be used in the production of integrated circuits, sensors, and other electronic components. The technology can also find applications in the development of advanced coatings and protective layers.
Questions about Insulating Film Formation: 1. How does the method of vaporizing the flowable oligomer film contribute to the overall quality of the insulating film? 2. What are the advantages of using plasma polymerization in forming insulating films on substrates with recesses?
Original Abstract Submitted
A method of forming an insulating film on a substrate having a recess, includes preparing the substrate inside a chamber of a processing apparatus, forming a flowable oligomer film on the substrate by supplying a processing gas containing a raw material gas and a diluent gas into the chamber and generating a flowable oligomer by plasma polymerization, controlling an interior of the chamber to have a pressure equal to or lower than a vapor pressure of the flowable oligomer to partially vaporize and remove the flowable oligomer film, and forming the insulating film in the recess by supplying energy to the substrate to cure the flowable oligomer.