DEGRADATIONS DETECTION FOR MOS-TRANSISTORS AND GATE-DRIVERS

Organization Name

Infineon Technologies AG

Inventor(s)

Albino Pidutti of Martignacco (IT)

Jens Barrenscheen of München (DE)

Andrea Baschirotto of Tortona (IT)

Paolo Del Croce of Villach (AT)

Ordwin Haase of Neubiberg (DE)

Andre Mourrier of Manosque (FR)

DEGRADATIONS DETECTION FOR MOS-TRANSISTORS AND GATE-DRIVERS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18604951 titled 'DEGRADATIONS DETECTION FOR MOS-TRANSISTORS AND GATE-DRIVERS

Simplified Explanation

The patent application describes a method involving generating a gate voltage for a field-effect transistor based on an input signal, creating a pulse signal with a pulse length corresponding to the time it takes for the gate voltage to reach a specific level transition, and monitoring the pulse signal to detect if the pulse length is within a specific range.

The method involves generating a gate voltage for a field-effect transistor in response to an input signal.
A pulse signal is created with a pulse length that matches the time it takes for the gate voltage to reach a specific level transition.
The pulse signal is monitored to check if the pulse length falls within a specific range.

Potential Applications

This technology could be applied in various fields such as semiconductor manufacturing, electronic circuit design, and signal processing.

Problems Solved

This method helps in accurately controlling the gate voltage of a field-effect transistor and ensures that the pulse length remains within a specific range, which can improve the overall performance of electronic devices.

Benefits

The benefits of this technology include precise gate voltage control, efficient signal processing, and enhanced reliability of electronic circuits.

Commercial Applications

Semiconductor manufacturing industry for optimizing transistor performance
Electronic device manufacturing for improving signal processing capabilities
Research and development sector for enhancing circuit design efficiency

Questions about the Technology

How does this method improve the performance of electronic devices?

This method enhances the control of gate voltage in field-effect transistors, leading to more accurate signal processing and improved overall device performance.

What are the potential applications of this technology beyond semiconductor manufacturing?

This technology can also be utilized in electronic circuit design, signal processing applications, and research and development sectors for various purposes.

Original Abstract Submitted

In accordance with an embodiment, a method includes: generating a gate voltage for a field-effect transistor in response to an input signal; generating a pulse signal with a pulse length that corresponds to the time that it takes until the gate voltage attains a specific level transition in response to a corresponding level transition in the input signal; and monitoring the pulse signal to detect whether the pulse length is outside a specific range.