18603373. ONE-TIME PROGRAMMABLE MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

ONE-TIME PROGRAMMABLE MEMORY DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Meng-Sheng Chang of Hsinchu County (TW)

Chia-En Huang of Hsinchu County (TW)

ONE-TIME PROGRAMMABLE MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18603373 titled 'ONE-TIME PROGRAMMABLE MEMORY DEVICE

The abstract describes an OTP memory cell that includes an antifuse transistor and a selection transistor for accessing the antifuse transistor based on specific signals.

• The OTP memory cell features an antifuse transistor connected to a first word line with a first signal, allowing it to switch between two states.
• A selection transistor is connected between the antifuse transistor and a bit line, with its gate terminal linked to a second word line carrying a second signal for providing access to the antifuse transistor.
• The antifuse transistor has a vacancy terminal as its first terminal and is connected to the selection transistor through its second terminal.

Potential Applications: - Secure data storage - Embedded systems - Integrated circuits

Problems Solved: - Providing non-volatile memory storage - Enabling one-time programmable memory cells

Benefits: - Enhanced data security - Efficient memory storage - Reliable operation

Commercial Applications: Title: Secure Non-Volatile Memory Solutions for Embedded Systems This technology can be utilized in various industries such as IoT, automotive, and consumer electronics for secure data storage and reliable operation.

Questions about OTP Memory Cells: 1. How does the antifuse transistor in an OTP memory cell differ from traditional memory cells?

  - The antifuse transistor in an OTP memory cell is designed to be programmable only once, making it ideal for secure data storage applications.

2. What are the advantages of using OTP memory cells in embedded systems?

  - OTP memory cells offer non-volatile storage capabilities, ensuring data retention even when power is removed.

Original Abstract Submitted

An OTP memory cell is provided. The OTP memory cell includes: an antifuse transistor, wherein a gate terminal of the antifuse transistor is connected to a first word line having a first signal, and the antifuse transistor is selectable between a first state and a second state in response to the first signal; and a selection transistor connected between the antifuse transistor and a bit line, wherein a gate terminal of the selection transistor is connected to a second word line having a second signal, and the selection transistor is configured to provide access to the antifuse transistor in response to the second signal. A first terminal of the antifuse transistor is a vacancy terminal, and a second terminal of the antifuse transistor is connected to the selection transistor.