18602230. METHOD FOR DICING A SEMICONDUCTOR WAFER simplified abstract (STMicroelectronics International N.V.)
METHOD FOR DICING A SEMICONDUCTOR WAFER
Organization Name
STMicroelectronics International N.V.
Inventor(s)
Carlos Augusto Suarez Segovia of Seyssinet-Pariset (FR)
METHOD FOR DICING A SEMICONDUCTOR WAFER - A simplified explanation of the abstract
This abstract first appeared for US patent application 18602230 titled 'METHOD FOR DICING A SEMICONDUCTOR WAFER
The abstract describes a patent application for a wafer with a semiconductor substrate, an interconnection network with metal layers and ultra-low dielectric constant dielectric layers, contact regions, and dicing regions. A hard mask is formed with a pattern defining a dicing line, involving etching openings in the dicing and contact regions, and a chemical treatment to clean the metal contact surface. A vertical dielectric layer is deposited to cover the dicing line edges before the chemical treatment.
- Semiconductor wafer with advanced interconnection network
- Utilization of ultra-low dielectric constant dielectric layers
- Formation of a hard mask defining dicing lines
- Etching and cleaning processes for precise patterning
- Deposition of vertical dielectric layer before final treatment
Potential Applications: - Semiconductor manufacturing - Integrated circuit production - Advanced electronic devices
Problems Solved: - Enhanced precision in wafer processing - Improved electrical performance - Increased reliability of semiconductor devices
Benefits: - Higher efficiency in semiconductor production - Better signal transmission capabilities - Reduced signal interference
Commercial Applications: Title: Advanced Semiconductor Wafer Technology for Enhanced Interconnection Networks This technology can be applied in the production of high-performance electronic devices, leading to improved functionality and reliability. It has significant implications for the semiconductor industry, enabling the development of cutting-edge products with superior performance.
Prior Art: Readers can explore prior research in semiconductor manufacturing, interconnection network design, and dielectric materials to understand the evolution of this technology.
Frequently Updated Research: Researchers are continually exploring new materials and processes to further enhance the performance of semiconductor wafers and interconnection networks.
Questions about Semiconductor Wafer Technology: 1. How does the use of ultra-low dielectric constant dielectric layers impact the performance of the wafer? 2. What are the key challenges in implementing advanced interconnection networks in semiconductor manufacturing?
Original Abstract Submitted
A wafer includes a semiconductor substrate, an interconnection network provided with metal layers and at least one ultra-low dielectric constant dielectric layer, at least one contact region and at least one dicing region. A hard mask is formed having a pattern that defines a dicing line. The formation of the hard mask includes a first etching of an opening in the dicing region to expose the semiconductor substrate in the dicing region, a second etching of an opening in the contact region to expose a surface of a metal contact in the contact region, and a chemical treatment for cleaning the uncovered surface of the metal contact. A vertical dielectric layer is deposited to cover edges of the opening defining the dicing line. This layer is deposited before the chemical treatment is performed.