MRAM CELL AND MRAM

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

MRAM CELL AND MRAM - A simplified explanation of the abstract

This abstract first appeared for US patent application 18602174 titled 'MRAM CELL AND MRAM

The abstract describes a patent application for Magnetic Random Access Memory (MRAM) cells, which consist of stacked Magnetic Tunnel Junction (MTJ) devices connected in series between a bit line and a source line. The stacked MTJ devices vary in size and each include a free layer, a pinned layer, and a barrier layer.

The MRAM cells feature stacked MTJ devices with different sizes.
Each stacked MTJ device includes a free layer, a pinned layer, and a barrier layer.
The free layers of adjacent stacked MTJ devices are in direct contact with each other.

Potential Applications: - MRAM technology can be used in various electronic devices such as computers, smartphones, and IoT devices. - It can be applied in data storage systems, offering fast and reliable memory access.

Problems Solved: - MRAM cells address the need for non-volatile memory solutions with high speed and low power consumption. - They provide a more stable and durable alternative to traditional memory technologies.

Benefits: - Faster data access speeds compared to traditional memory technologies. - Lower power consumption, leading to improved energy efficiency. - Enhanced durability and reliability for long-term data storage.

Commercial Applications: Title: "Innovative MRAM Technology for High-Speed Data Storage" MRAM technology can be utilized in consumer electronics, data centers, and industrial applications where fast and reliable memory access is crucial. This innovation has the potential to revolutionize the data storage industry by offering a more efficient and durable memory solution.

Questions about MRAM Technology: 1. How does MRAM technology compare to other types of non-volatile memory? 2. What are the potential challenges in implementing MRAM technology in mainstream electronic devices?

Original Abstract Submitted

Magnetic random access memory (MRAM) cells are provided. MRAM cell includes a plurality of stacked magnetic tunnel junction (MTJ) devices coupled in serial and coupled between a bit line and a source line. The stacked MTJ devices have different sizes. Each of the stacked MTJ devices includes a free layer, a pinned layer and a barrier layer between the free layer and the pinned layer. The free layers of two adjacent stacked MTJ devices are in direct contact with each other.