NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE SEMICONDUCTOR MODULE

Organization Name

Inventor(s)

NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE SEMICONDUCTOR MODULE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18602050 titled 'NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE SEMICONDUCTOR MODULE

The present disclosure introduces a nitride semiconductor device consisting of various interconnected elements.

The device includes a switching element made of a nitride semiconductor material.
It features a source pad connected to the source electrode of the switching element.
A drain pad is electrically linked to the drain electrode of the switching element.
A gate pad is connected to the gate electrode of the switching element.
A capacitive element is attached to the source electrode of the switching element.
A first pad is linked to the capacitive element.
A resistive element is electrically connected to the first pad.
A second pad is connected to the resistive element.

Potential Applications: - Power electronics - Semiconductor industry - Electrical engineering

Problems Solved: - Enhanced performance in semiconductor devices - Improved electrical connectivity - Increased efficiency in power management

Benefits: - Higher reliability - Better power handling capabilities - Improved overall device performance

Commercial Applications: Title: "Advanced Nitride Semiconductor Device for Enhanced Power Management" This technology can be utilized in various commercial applications such as: - Power supply units - Electric vehicles - Renewable energy systems

Questions about Nitride Semiconductor Device: 1. How does the nitride semiconductor material improve the performance of the device?

  - The nitride semiconductor material offers higher electron mobility and better thermal properties, leading to improved device efficiency.

2. What are the key advantages of using a resistive element in this semiconductor device?

  - The resistive element helps in controlling the flow of current and ensures stable operation of the device.

Original Abstract Submitted

The present disclosure provides a nitride semiconductor device. The nitride semiconductor device includes: a switching element formed of a nitride semiconductor; a source pad electrically connected to a source electrode of the switching element; a drain pad electrically connected to a drain electrode of the switching element; a gate pad electrically connected to a gate electrode of the switching element; a capacitive element electrically connected to the source electrode of the switching element; a first pad electrically connected to the capacitive element; a resistive element electrically connected to the first pad; and a second pad electrically connected to the resistive element.