CHANNEL EXTENSION STRUCTURES FOR SEMICONDUCTOR DEVICES

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

CHANNEL EXTENSION STRUCTURES FOR SEMICONDUCTOR DEVICES

This abstract first appeared for US patent application 18599702 titled 'CHANNEL EXTENSION STRUCTURES FOR SEMICONDUCTOR DEVICES

Original Abstract Submitted

The present disclosure describes a semiconductor device having a channel extension structure. The semiconductor device includes a channel structure on a substrate. The channel structure includes a central portion and an end portion. The semiconductor device further includes a gate structure wrapped around the central portion of the channel structure, a source/drain (S/D) structure on the substrate and adjacent to the end portion of the channel structure, and an extension structure between the channel structure and the S/D structure. The extension structure has a first sidewall having a first height and adjacent to the end portion of the channel structure and a second sidewall having a second height and adjacent to the S/D structure greater than the first height.