18599619. SUBSTRATE TRANSFER METHOD AND SUBSTRATE TRANSFER APPARATUS simplified abstract (Tokyo Electron Limited)

SUBSTRATE TRANSFER METHOD AND SUBSTRATE TRANSFER APPARATUS

Organization Name

Tokyo Electron Limited

Inventor(s)

Kenichirou Matsuyama of Koshi City (JP)

Hiroki Tadatomo of Tokyo (JP)

Yoji Sakata of Koshi City (JP)

Shinsuke Takaki of Koshi City (JP)

SUBSTRATE TRANSFER METHOD AND SUBSTRATE TRANSFER APPARATUS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18599619 titled 'SUBSTRATE TRANSFER METHOD AND SUBSTRATE TRANSFER APPARATUS

Simplified Explanation: The patent application describes a method for transferring a substrate with a metal-containing resist film from one location to another, including diverting the substrate to a standby chamber if there is an issue in the transfer path.

• The method involves transferring the substrate to a standby chamber with a different atmosphere if there is an abnormality in the transfer path.
• The substrate is put on standby in the second atmosphere without being transferred to the intended location.
• This process ensures the safety of the substrate and the metal-containing resist film during transfer.

Key Features and Innovation:

• Transfer method for substrates with metal-containing resist films.
• Ability to divert substrates to a standby chamber in case of transfer path abnormalities.
• Ensures the safety of the substrate and resist film during transfer.

Potential Applications:

• Semiconductor manufacturing processes.
• Thin film deposition industries.
• Microelectronics production.

Problems Solved:

• Prevents damage to substrates during transfer.
• Ensures the integrity of metal-containing resist films.
• Improves overall efficiency in substrate handling.

Benefits:

• Enhanced safety during substrate transfer.
• Reduced risk of damage to metal-containing resist films.
• Increased reliability in manufacturing processes.

Commercial Applications: Potential commercial applications include:

• Semiconductor fabrication facilities.
• Thin film coating companies.
• Microelectronics manufacturing plants.

Questions about the Technology: 1. How does the method ensure the safety of the substrate during transfer? 2. What are the specific differences between the first and second atmospheres in the standby chamber?

Frequently Updated Research: Stay updated on the latest advancements in substrate transfer methods and semiconductor manufacturing processes for improved efficiency and reliability.

Original Abstract Submitted

A substrate transfer method of transferring a substrate on which a metal-containing resist film is formed from a first placement part to a second placement part, includes transferring, depending on an abnormality in a transfer path, the substrate to a standby chamber in which a second atmosphere different from a first atmosphere of the first placement part is formed, without transferring the substrate to the second placement part, and putting the substrate on standby in the second atmosphere.