18593504. FLEXIBLE DESIGN AND PLACEMENT OF ALIGNMENT MARKS simplified abstract (Micron Technology, Inc.)
FLEXIBLE DESIGN AND PLACEMENT OF ALIGNMENT MARKS
Organization Name
Inventor(s)
Shruthi Kumara Vadivel of Boise ID (US)
Harsh Narendrakumar Jain of Boise ID (US)
Lance David Williamson of Boise ID (US)
Adam Lewis Olson of Boise ID (US)
FLEXIBLE DESIGN AND PLACEMENT OF ALIGNMENT MARKS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18593504 titled 'FLEXIBLE DESIGN AND PLACEMENT OF ALIGNMENT MARKS
The memory device described in the patent application includes a substrate with embedded alignment marks for precise patterning of masking layers.
- The first alignment mark on the substrate serves as a reference for the deposition of a patterned second masking layer.
- The first masking layer on the substrate is opaque or semi-opaque and sacrificial in nature.
- A second alignment mark, which may be part of the first masking layer, corresponds to specific structural locations in the substrate.
- The patterned second masking layer contains additional alignment marks and defines the locations of structural features in the substrate.
Potential Applications: - Semiconductor manufacturing - Memory chip fabrication - Nanotechnology research
Problems Solved: - Precise alignment and patterning of masking layers - Accurate placement of structural features in the substrate
Benefits: - Improved memory device performance - Enhanced manufacturing efficiency - Increased accuracy in structural design
Commercial Applications: Title: Advanced Memory Device Manufacturing Technology This technology could be utilized in the production of high-performance memory devices, leading to faster and more reliable electronic devices. The market implications include improved competitiveness for companies in the semiconductor industry.
Questions about the technology: 1. How does the use of alignment marks improve the manufacturing process of memory devices? 2. What are the advantages of sacrificial masking layers in semiconductor fabrication?
Frequently Updated Research: Researchers are constantly exploring new methods to enhance the precision and efficiency of memory device manufacturing processes. Stay updated on the latest advancements in semiconductor technology to leverage the benefits of this innovative approach.
Original Abstract Submitted
A memory device can include a substrate and a first alignment mark embedded in the substrate. The first alignment mark can be configured to a reference for a patterned second masking layer which is different from a first masking layer deposited on the substrate, and onto which the second patterned masking layer is deposited. The first masking layer can be an opaque or semi-opaque sacrificial layer and a second alignment mark can comprise at least a portion of the first masking layer. A location of the second alignment mark can correspond to a particular structure location in the substrate. The patterned second masking layer can include an additional alignment mark that is spaced laterally apart from the second alignment mark and the patterned second masking layer can define one or more locations of one or more structural features in the substrate.