Jump to content

18591188. SEMICONDUCTOR DEVICE (KABUSHIKI KAISHA TOSHIBA)

From WikiPatents

SEMICONDUCTOR DEVICE

Organization Name

KABUSHIKI KAISHA TOSHIBA

Inventor(s)

Tomoaki Inokuchi of Yokohama JP

Hiro Gangi of Tokyo JP

Yusuke Kobayashi of Yokohama JP

Tatsunori Sakano of Tokyo JP

Tatsuo Shimizu of Tokyo JP

Shotaro Baba of Kawasaki JP

Taichi Fukuda of Yokohama JP

SEMICONDUCTOR DEVICE

This abstract first appeared for US patent application 18591188 titled 'SEMICONDUCTOR DEVICE

Original Abstract Submitted

The major element includes a first electrode, a second electrode, a first semiconductor layer located between the first electrode and the second electrode, the first semiconductor layer forming a first Schottky junction with the second electrode, and a first gate electrode facing the first Schottky junction. The control element includes a third electrode, a fourth electrode, a second semiconductor layer located between the third electrode and the fourth electrode, the second semiconductor layer forming a second Schottky junction with the fourth electrode, and a second gate electrode facing the second Schottky junction.

Cookies help us deliver our services. By using our services, you agree to our use of cookies.